Pore formation mechanisms for the Si-HF system
نویسندگان
چکیده
منابع مشابه
Pore Formation Mechanisms for the Si-hf System
A model is presented with the potential to account for all processes of the reactive Si – liquid interface including, e.g., current oscillations, and the formation of nano-, meso, and macropores with their specific dependence on crystal orientation. The model assumes that current flow is spatially and temporally inhomogeneous current thus flows in current "lines" occurring in current "bursts". ...
متن کاملStudy of the Mechanism and Causes of Pore Formation in Sr-modified Al-Si Alloys
The formation of microporosity in modified Al-Si alloys has been reviewed in the present study. A major concern in modification is the increased tendency to form microporosity in the macro-shrinkage free Al-Si alloy castings. It has also been demonstrated that at low hydrogen contents (0.1cc/ 100g, Al), where only shrinkage porosity should occur, the effect of Sr-modification on porosity conten...
متن کاملStudy of the Mechanism and Causes of Pore Formation in Sr-modified Al-Si Alloys
The formation of microporosity in modified Al-Si alloys has been reviewed in the present study. A major concern in modification is the increased tendency to form microporosity in the macro-shrinkage free Al-Si alloy castings. It has also been demonstrated that at low hydrogen contents (0.1cc/ 100g, Al), where only shrinkage porosity should occur, the effect of Sr-modification on porosity conten...
متن کاملThermodynamic modeling of the Hf-Si-O system
The Hf-O system has been modeled by combining existing experimental data and first-principles calculations results through the CALPHAD approach. Special quasirandom structures of α and β hafnium were generated to calculate the mixing behavior of oxygen and vacancies. For the total energy of oxygen, vibrational, rotational and translational degrees of freedom were considered. The Hf-O system was...
متن کاملFormation and electrical properties of Hf Si2 grown thermally from evaporated Hf and Si films
2 MeV He+ backscattering spectrometry and x-ray diffraction have been used to study HfSi2 formed by thermal annealing of a Hf Si film on evaporated Si (Si•) at temperatures between 575 and 650 ·c. A laterally uniform layer of Hf Si2 forms and its thickness is proportional to the square root of time at a fixed temperature. The activation energy of this reaction is found to be 3.5 ± 0.3 eV. This ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Materials Science and Engineering: B
سال: 2000
ISSN: 0921-5107
DOI: 10.1016/s0921-5107(99)00287-1